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R5019ANJ Datasheet(PDF) 2 Page - Rohm |
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R5019ANJ Datasheet(HTML) 2 Page - Rohm |
2 / 6 page www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R5019ANJ Electrical characteristics (Ta = 25 C) Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 100 nA VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 500 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS - - 100 AVDS=500V, VGS=0V Gate threshold voltage VGS (th) 2.5 - 4.5 V VDS=10V, ID=1mA Forward transfer admittance l Yfs l 6.5 - - S VDS=10V, ID=9.5A Input capacitance Ciss - 2050 - pF VDS=25V Output capacitance Coss - 1200 - pF VGS=0V Reverse transfer capacitance Crss - 50 - pF f=1MHz Turn-on delay time td(on) - 40 - ns VDD 250V, ID=9.5A Rise time tr - 115 - ns VGS=10V Turn-off delay time td(off) - 165 - ns RL=26.3 Fall time tf - 100 - ns RG=10 Total gate charge Qg - 55 - nC VDD 250V Gate-source charge Qgs - 11 - nC ID=19A Gate-drain charge Qgd - 24 - nC VGS=10V *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward Voltage VSD - - 1.5 V IS=19A, VGS=0V *Pulsed 0.18 0.24 Parameter Conditions Conditions Parameter Static drain-source on-state resistance RDS (on) ID=9.5A, VGS=10V - * * * * * * * * * * 2/5 2011.10 - Rev.A |
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