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VSMY7852X01-GS08 Datasheet(PDF) 6 Page - Vishay Siliconix

Part # VSMY7852X01-GS08
Description  High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSMY7852X01-GS08 Datasheet(HTML) 6 Page - Vishay Siliconix

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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81146
6
Rev. 1.0, 29-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY7852X01
Vishay Semiconductors High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for
Preconditioning acc. to JEDEC, Level 2a
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020B
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Time (s)
240 °C
245 °C
max. 260 °C
max. 120 s
max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C


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