Q67000-S105 datasheet(7/7 Pages) SIEMENS

Part #	Q67000-S105

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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7 / 7 page

7

12/05/1997

Semiconductor Group

BSS 295

Drain-source on-resistance

R

DS (on) = ƒ(Tj)

parameter: ID = 1.4 A, VGS = 10 V

-60

-20

20

60

100

°C

160

T

j

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0.65

Ω

0.75

R

DS (on)

typ

98%

Gate threshold voltage

V

GS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

V

GS(th)

-60

-20

20

60

100

°C

160

T

j

2%

typ

98%

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz

0

5

10

15

20

25

30

V

40

V

DS

0

10

1

10

2

10

3

10

pF

C

rss

C

oss

C

iss

Forward characteristics of reverse diode

I

F = ƒ(VSD)

parameter: Tj, tp = 80 µs

-2

10

-1

10

0

10

1

10

A

I

F

0.0

0.4

0.8

1.2

1.6

2.0

2.4

V

3.0

V

SD

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

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Q67000-S105 Datasheet(PDF) 7 Page - Siemens Semiconductor Group

Q67000-S105 Datasheet(HTML) 7 Page - Siemens Semiconductor Group

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