Electronic Components Datasheet Search |
|
Q67000-S105 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
|
Q67000-S105 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 7 page 7 12/05/1997 Semiconductor Group BSS 295 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 1.4 A, VGS = 10 V -60 -20 20 60 100 °C 160 T j 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 Ω 0.75 R DS (on) typ 98% Gate threshold voltage V GS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 T j 2% typ 98% Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 V DS 0 10 1 10 2 10 3 10 pF C C rss C oss C iss Forward characteristics of reverse diode I F = ƒ(VSD) parameter: Tj, tp = 80 µs -2 10 -1 10 0 10 1 10 A I F 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V SD T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
Similar Part No. - Q67000-S105 |
|
Similar Description - Q67000-S105 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |