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BSS297 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BSS297 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 7 page  Semiconductor Group 1 12/05/1997 BSS 297 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2 Ω TO-92 SS 297 Type Ordering Code Tape and Reel Information BSS 297 Q67000-S118 E6288 BSS 297 Q67000-S292 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V Drain-gate voltage RGS = 20 kΩ V DGR 200 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current TA = 25 °C ID 0.48 A DC drain current, pulsed TA = 25 °C IDpuls 1.92 Power dissipation TA = 25 °C Ptot 1 W |
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