Q67000-S229 datasheet(1/8 Pages) SIEMENS

Part #	Q67000-S229

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

Sep-13-1996

BSS 131

SIPMOS ® Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• VGS(th) = 0.8...2.0V

Pin 1

Pin 2

Pin 3

G

S

D

Type

VDS

ID

RDS(on)

Package

Marking

BSS 131

240 V

0.1 A

16

Ω

SOT-23

SRs

Type

Ordering Code

Tape and Reel Information

BSS 131

Q62702-S565

E6327

BSS 131

Q67000-S229

E6433

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

VDS

240

V

Drain-gate voltage

RGS = 20 kΩ

V

DGR

240

Gate source voltage

VGS

± 14

Gate-source peak voltage,aperiodic

Vgs

± 20

Continuous drain current

TA = 26 °C

ID

0.1

A

DC drain current, pulsed

TA = 25 °C

IDpuls

0.4

Power dissipation

TA = 25 °C

Ptot

0.36

W

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Q67000-S229 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Q67000-S229 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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