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BSS131 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BSS131 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 8 page Semiconductor Group 6 Sep-13-1996 BSS 131 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0 1 2 3 4 5 6 7 8 V 10 V DS 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 A 0.24 I D V GS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l Ptot = 0W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18 I D 0 5 10 15 20 25 30 35 40 Ω 50 R DS (on) VGS [V] = a 2.0 VGS [V] = a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 V GS 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A 0.32 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A 0.30 I D 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 S 0.24 g fs |
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