BSS131 datasheet(6/8 Pages) SIEMENS

Part #	BSS131

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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6 / 8 page

Semiconductor Group

6

Sep-13-1996

BSS 131

Typ. output characteristics

ID = ƒ(VDS)

parameter:

tp = 80 µs , Tj = 25 °C

0

1

2

3

4

5

6

7

8

V

10

V

DS

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

A

0.24

I

D

V

GS

[V]

a

2.0

b

2.5

c

3.0

d

3.5

e

4.0

f

4.5

g

5.0

h

6.0

i

7.0

j

8.0

k

9.0

l

Ptot = 0W

l

10.0

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter:

tp = 80 µs, Tj = 25 °C

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14

A

0.18

I

D

0

5

10

15

20

25

30

35

40

Ω

50

R

DS (on)

VGS [V] =

a

2.0

VGS [V] =

a

2.5

b

3.0

c

3.5

d

4.0

e

4.5

f

5.0

g

6.0

h

7.0

i

8.0

j

9.0

k

10.0

Typ. transfer characteristics

ID = f(VGS)

parameter:

tp = 80 µs

0

1

2

3

4

5

6

7

8

V

10

V

GS

0.00

0.04

0.08

0.12

0.16

0.20

0.24

A

0.32

I

D

Typ. forward transconductance

gfs = f (ID)

parameter:

tp = 80 µs,

0.00

0.04

0.08

0.12

0.16

0.20

0.24

A

0.30

I

D

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

S

0.24

g

fs

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BSS131 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

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