VT3045BP

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Vishay General Semiconductor

Revision: 23-Feb-12

1

Document Number: 89447

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS Directive 2011/65/EU

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

MECHANICAL DATA

Case: TO-220AC

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Notes

PRIMARY CHARACTERISTCS

30 A

45 V

200 A

0.51 V

150 °C

200 °C

TO-220AC

CASE

PIN 2

PIN 1

1

2

PARAMETER

SYMBOL

VT3045BP

UNIT

Maximum repetitive peak reverse voltage

45

V

Maximum DC forward bypassing current (fig. 1)

30

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

200

A

Operating junction temperature range (AC mode)

- 40 to + 150

°C

Junction temperature in DC forward current

without reverse bias, t

 1 h

200

°C