Document Number: 89367

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Revision: 27-Oct-10

3

VFT1045CBP

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Instantaneous Forward Voltage (V)

0.1

0.2

0.4

0.7

0.9

1.1

100

10

1

0.1

T

T

T

T

0.6

0.8

1.0

0.3

0.5

20

40

60

80

100

1

0.1

0.01

0.001

100

10

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

10

1

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

ITO-220AB

0.076 (1.93) REF.

45° REF.

PIN

3

2

1

0.404 (10.26)

0.384 (9.75)

0.076 (1.93) REF.

0.600 (15.24)

0.580 (14.73)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.057 (1.45)

0.045 (1.14)

0.191 (4.85)

0.171 (4.35)

0.671 (17.04)

0.651 (16.54)

0.035 (0.89)

0.025 (0.64)

0.205 (5.21)

0.195 (4.95)

0.025 (0.64)

0.015 (0.38)

0.105 (2.67)

0.095 (2.41)

0.028 (0.71)

0.020 (0.51)

0.110 (2.79)

0.100 (2.54)

7° REF.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

0.110 (2.79)

0.100 (2.54)

0.190 (4.83)

0.170 (4.32)

7° REF.

7° REF.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.350 (8.89)

0.330 (8.38)