Document Number: 93244

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Revision: 06-Apr-11

1

This document is subject to change without notice.

VS-8EWX06FN-M3

Vishay Semiconductors

New Product

FEATURES

• 175 °C maximum operating junction temperature

• For PFC CCM operation

• Low forward voltage drop

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21 definition

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery

current

minimize

the

switching

losses

and

reduce

over dissipation in the switching element and snubbers.

PRODUCT SUMMARY

Package

D-PAK (TO-252AA)

8 A

600 V

3.0 V

15 ns

175 °C

Diode variation

Single die

2, 4

3

Anode

1

N/C

D-PAK (TO-252AA)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

600

V

Average rectified forward current

8

A

Non-repetitive peak surge current

90

Peak repetitive forward current

16

Operating junction and storage temperatures

- 65 to 175

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

600

-

-

V

Forward voltage

-

2.3

3.0

-

1.4

1.7

Reverse leakage current

-

-

50

μA

-

-

500

Junction capacitance

-

7

-

pF

Series inductance

Measured lead to lead 5 mm from package body

-

8

-

nH