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6EWH06FNTR-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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6EWH06FNTR-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 93514 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 31-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ultralow VF Ultrafast Rectifier, 6 A FRED Pt® VS-6EWH06FN-M3 Vishay Semiconductors New Product FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 6 A VR 600 V VF at IF 2.1 V trr (typ.) 18 ns TJ max. 175 °C Diode variation Single die 2, 4 3 Anode 1 N/C D-PAK (TO-252AA) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage VRRM 600 V Average rectified forward current IF(AV) TC = 144 °C 6 A Non-repetitive peak surge current IFSM TJ = 25 °C 70 Peak repetitive forward current IFM TC = 144 °C, f = 20 kHz, d = 50 % 12 Operating junction and storage temperatures TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 600 - - V Forward voltage VF IF = 6 A - 1.60 2.1 IF = 6 A, TJ = 150 °C - 1.26 1.7 Reverse leakage current IR VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 250 Junction capacitance CT VR = 600 V - 3.5 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH |
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