Q67000-S4001 datasheet(3/8 Pages) SIEMENS

Part #	Q67000-S4001

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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3 / 8 page

Semiconductor Group

3

29/01/1998

BSP 320 S

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 2.9 A

gfs

2.5

-

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

-

275

340

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

-

90

120

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

-

50

65

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

td(on)

-

11

17

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

tr

-

25

40

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

td(off)

-

25

40

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

tf

-

35

55

Gate charge at threshold

VDD = 40 V, ID = 0.1 A, VGS 0 to 1 V

Qg(th)

-

0.24

0.3

nC

Gate Charge at 7.0 V

VDD = 40 V, ID = 2.9 A, VGS 0 to 7 V

Qg(7)

-

7.4

9.3

Gate Charge total

VDD = 40 V, ID = 2.9 A, VGS 0 to 10 V

Qg(total)

-

9.7

12

Gate plateau voltage

VDS = 15 V, ID = 2.9 A

V(plateau)

-

4.7

-

V

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Q67000-S4001 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Q67000-S4001 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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