BSP320S datasheet(2/8 Pages) SIEMENS

Part #	BSP320S

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 8 page

Semiconductor Group

2

29/01/1998

BSP 320 S

Maximum Ratings

Parameter

Symbol

Values

Unit

Chip or operating temperature

Tj

-55 ... + 150

°C

Storage temperature

Tstg

-55 ... + 150

Thermal resistance, chip to ambient air 1)

RthJA

≤ 70

K/W

Thermal resistance, junction-soldering point 1)

RthJS

17

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

*) MIL STD 883, Method 3015, Class 2

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

60

-

V

Gate threshold voltage

VGS=VDS, ID = 20 µA

VGS(th)

2.1

3

4

Zero gate voltage drain current

VDS = 60 V, VGS = 0 V, Tj = -40 °C

VDS = 60 V, VGS = 0 V, Tj = 25 °C

VDS = 60 V, VGS = 0 V, Tj = 125 °C

IDSS

-

0.1

-

100

1

0.1

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

-

10

100

nA

Drain-Source on-state resistance

VGS = 10 V, ID = 2.9 A

RDS(on)

-

0.09

0.12

Ω

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BSP320S Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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