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BSP319 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BSP319 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 Sep-12-1996 BSP 319 Avalanche energy E AS = ƒ(Tj) parameter: ID = 3.8 A, VDD = 25 V RGS = 25 Ω, L = 6.2 mH 20 40 60 80 100 120 °C 160 T j 0 10 20 30 40 50 60 70 80 mJ 100 E AS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 45 46 47 48 49 50 51 52 53 54 55 56 57 58 V 60 V (BR)DSS Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C |
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