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Q62702-S655 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part # Q62702-S655
Description  SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

Q62702-S655 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
Package Outline
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
Electrical Characteristics (cont’d)
at
T
j = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous reverse drain current
T
A = 25 ˚C
I
S
–
–
0.100
A
Pulsed reverse drain current
T
A = 25 ˚C
I
SM
–
–
0.300
Diode forward on-voltage
I
F = 0.2 A, VGS = 0
V
SD
–
0.90
1.30
V
V
GS(th) Grouping
Symbol
Limit Values
Unit
Test Condition
min.
max.
Range of
V
GS(th)
∆V
GS(th)
–
0.15
V
–
Threshold voltage selected in groups 1):
P
R
S
T
U
V
W
V
GS(th)
– 0.95
– 1.08
– 1.21
– 1.34
– 1.47
– 1.60
– 1.73
– 0.80
– 0.93
– 1.06
– 1.19
– 1.32
– 1.45
– 1.58
V
V
V
V
V
V
V
V
DS1 = 0.2 V;
V
DS2 = 3 V;
I
D = 1 mA
SOT-223
Dimensions in mm
BSP 135


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