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BSP135 Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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BSP135 Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
5 / 7 page Semiconductor Group 5 Typ. transfer characteristics I D = f (VGS) parameter: t p = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Drain-source on-resistance R DS(on) = f(Tj) parameter: I D = 0.01 A, VGS = 0 V, (spread) Typ. forward transconductance g fs = f (ID) parameter: V DS ≥ 2 × ID × RDS(on)max., tp = 80 µs Typ. capacitances C = f (V DS) parameter: V GS = 0, f = 1 MHz BSP 135 |
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