BSM50GAL120DN2 datasheet(4/5 Pages) SIEMENS

Part #	BSM50GAL120DN2

Description	IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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4 / 5 page

Semiconductor Group

4

Mar-29-1996

BSM 50 GAL 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Chopper Diode

Chopper diode forward voltage

IFC = 75 A, VGE = 0 V, Tj = 25 °C

IFC = 75 A, VGE = 0 V, Tj = 125 °C

VFC

-

1.8

2.3

-

2.8

V

Reverse recovery time, chopper

IFC = 75 A, VR = -600 V, VGE = 0 V

diF/dt = -800 A/µs, Tj = 125 °C

trrC

-

0.25

-

µs

Reverse recovery charge, chopper

IFC = 75 A, VR = -600 V, VGE = 0 V

diF/dt = -900 A/µs

Tj = 25 °C

Tj = 125 °C

QrrC

-

12

3.2

-

µC

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BSM50GAL120DN2 Datasheet(PDF) 4 Page - Siemens Semiconductor Group

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