Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

2.5V Drive Nch MOSFET

2SK3018UB



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Low on-resistance.

2) Low voltage drive(2.5V drive).



Application

Switching



Packaging specifications



Inner circuit

Package

Taping

Code

TCL

Basic ordering unit (pieces)

3000

2SK3018UB





Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

30

V

Gate-source voltage

20

V

Continuous

100

mA

Pulsed

400

mA

Power dissipation

200

mW

Channel temperature

Tch

150

C

Range of storage temperature

Tstg

55 to 150

C

*1 Pw

10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.



Thermal resistance

Symbol

Limits

Unit

Channel to Ambient

Rth (ch-a)

625

C / W

* Each terminal mounted on a recommended land.

Parameter

Type

Drain current

Parameter

*2

*1

(1) Gate

(2) Source

(3) Drain

∗

1 ESD PROTECTION DIODE

∗

2 BODY DIODE

*

UMT3F

2.0

0.32

0.65

0.65

1.3

(1)

(2)

(3)

0.9

0.13

Abbreviated symbol : KN

∗2

∗1

(3)

(1)

(2)

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2011.10 - Rev.A