VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3

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Vishay Semiconductors

Revision: 20-Sep-11

2

Document Number: 93319

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

Note

(1)

thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

3 A

0.57

V

6 A

0.71

3 A

0.51

6 A

0.62

Maximum reverse leakage current

See fig. 4

1

mA

20

Typical junction capacitance

190

pF

Typical series inductance

Measured lead to lead 5 mm from package body

9.0

nH

Maximum voltage rate of charge

dV/dt

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

- 40 to 150

°C

Maximum thermal resistance,

junction to ambient

DC operation

Without cooling fin

80

°C/W

Typical thermal resistance,

junction to lead

With fin 20 mm x 20 mm (0.79" x 0.79")

1.0 mm (0.04") thickness

15

Approximate weight

1.2

g

0.042

oz.

Marking device

Case style C-16

31DQ03

31DQ04

dP

tot

dT

J

-------------

1

R

thJA

--------------

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