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31DQ04-M3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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31DQ04-M3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page VS-31DQ03, VS-31DQ03-M3, VS-31DQ04, VS-31DQ04-M3 www.vishay.com Vishay Semiconductors Revision: 20-Sep-11 2 Document Number: 93319 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width < 300 μs, duty cycle < 2 % Note (1) thermal runaway condition for a diode on its own heatsink ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 VFM (1) 3 A TJ = 25 °C 0.57 V 6 A 0.71 3 A TJ = 125 °C 0.51 6 A 0.62 Maximum reverse leakage current See fig. 4 IRM (1) TJ = 25 °C VR = Rated VR 1 mA TJ = 125 °C 20 Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF Typical series inductance LS Measured lead to lead 5 mm from package body 9.0 nH Maximum voltage rate of charge dV/dt Rated VR 10 000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ (1), TStg - 40 to 150 °C Maximum thermal resistance, junction to ambient RthJA DC operation Without cooling fin 80 °C/W Typical thermal resistance, junction to lead RthJL With fin 20 mm x 20 mm (0.79" x 0.79") 1.0 mm (0.04") thickness 15 Approximate weight 1.2 g 0.042 oz. Marking device Case style C-16 31DQ03 31DQ04 dP tot dT J ------------- 1 R thJA -------------- < |
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