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C67076-A2109-A70 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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C67076-A2109-A70 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 Mar-29-1996 BSM 25 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage RGE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC 25 38 A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 50 76 Power dissipation per IGBT TC = 25 °C Ptot 200 W Chip temperature Tj + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.6 K/W Diode thermal resistance, chip case RthJCD ≤ 1 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 |
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