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30WQ04FNPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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30WQ04FNPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Document Number: 94198 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Schottky Rectifier, 3.5 A VS-30WQ04FNPbF Vishay Semiconductors FEATURES • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION The VS-30WQ04FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 3.5 A VR 40 V VF at IF See Electrical table IRM 24 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 8 mJ Anode 1 3 Base cathode Anode 4, 2 D-PAK (TO-252AA) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 3.5 A VRRM 40 V IFSM tp = 5 μs sine 500 A VF 3 Apk, TJ = 125 °C 0.49 V TJ - 40 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-30WQ04FNPbF UNITS Maximum DC reverse voltage VR 40 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 135 °C, rectangular waveform 3.5 A Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 500 10 ms sine or 6 ms rect. pulse 80 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A |
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