VS-20TQ0..PbF Series, VS-20TQ0..-N3

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Vishay Semiconductors

Revision: 26-Aug-11

2

Document Number: 94167

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

20 A

0.57

V

40 A

0.73

20 A

0.51

40 A

0.67

Maximum reverse leakage curent

See fig. 2

2.7

mA

105

Maximum junction capacitance

1400

pF

Typical series inductance

Measured lead to lead 5 mm from package body

8.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

- 55 to 150

°C

Maximum thermal resistance,

junction to case

DC operation

See fig. 4

1.50

°C/W

Typical thermal resistance,

case to heatsink

Mounting surface, smooth and greased

0.50

Approximate weight

2g

0.07

oz.

Mounting torque

minimum

6 (5)

kgf ·

cm

(lbf ·

in)

maximum

12 (10)

Marking device

Case style TO-220AC

20TQ035

20TQ040

20TQ045