BSM200GB120DN2 datasheet(3/9 Pages) SIEMENS

Part #	BSM200GB120DN2

Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

3

Mar-29-1996

BSM 200 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

VCC = 600 V, VGE = 15 V, IC = 200 A

RGon = 4.7 Ω

td(on)

-

110

220

ns

Rise time

VCC = 600 V, VGE = 15 V, IC = 200 A

RGon = 4.7 Ω

tr

-

80

160

Turn-off delay time

VCC = 600 V, VGE = -15 V, IC = 200 A

RGoff = 4.7 Ω

td(off)

-

550

800

Fall time

VCC = 600 V, VGE = -15 V, IC = 200 A

RGoff = 4.7 Ω

tf

-

80

120

Free-Wheel Diode

Diode forward voltage

IF = 200 A, VGE = 0 V, Tj = 25 °C

IF = 200 A, VGE = 0 V, Tj = 125 °C

VF

-

1.8

2.3

-

2.8

V

Reverse recovery time

IF = 200 A, VR = -600 V, VGE = 0 V

diF/dt = -2000 A/µs, Tj = 125 °C

trr

-

0.5

-

µs

Reverse recovery charge

IF = 200 A, VR = -600 V, VGE = 0 V

diF/dt = -2000 A/µs

Tj = 25 °C

Tj = 125 °C

Qrr

-

36

12

-

µC

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BSM200GB120DN2 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

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