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SMCJ33A Datasheet(PDF) 1 Page - Vishay Siliconix |
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SMCJ33A Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Revision: 20-Dec-11 1 Document Number: 89331 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount TRANSZORB® Transient Voltage Suppressors DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional use C or CA suffix (e.g. SMCJ188CA). Electrical characteristics apply in both directions. FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: DO-214AB (SMCJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal PRIMARY CHARACTERISTICS VWM 5.0 V to 188 V PPPM 1500 W IFSM (uni-directional only) 200 A TJ max. 150 °C DO-214AB (SMC) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) PPPM (1)(2) 1500 W Peak pulse current with a 10/1000 μs waveform IPPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only IFSM (2) 200 A Power dissipation on infinite heatsink, TA = 50 °C PD 6.5 W Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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