VESD05A1B-HD1 datasheet(3/6 Pages) VISHAY

Part #	VESD05A1B-HD1

Description	ESD-Protection Diode in LLP1006-2L

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Manufacturer	VISHAY [Vishay Siliconix]

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VESD05A1B-HD1

ESD-Protection Diode in

LLP1006-2L

Vishay Semiconductors

Document Number: 81796

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

Rev. 1.4, 26-Oct-10

3

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330

Ω/150 pF)

Fig. 2 - 8/20 μs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR

Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF

Fig. 5 - Typical Reverse Voltage VR vs.

Reverse Current IR

Fig. 6 - Typical Clamping Voltage vs.

Peak Pulse Current IPP

0 %

20 %

40 %

60 %

80 %

100 %

120 %

- 10 0 10 20 30 40 50 60 70 80 90 100

Time (ns)

Rise time = 0.7 ns to 1 ns

53 %

27 %

20557

0 %

20 %

40 %

60 %

80 %

100 %

010

20

30

40

Time (µs)

20 µs to 50 %

8 µs to 100 %

20548

21156

V

R (V)

04

3

2

1

5

25

20

15

10

0

5

f = 1 MHz

21157

V

F (V)

0.5

1

0.8

0.7

0.6

0.01

100

10

1

0.1

0.001

0.9

21158

I

R (µA)

0.01

100

10

1

0.1

1

5

4

3

2

0

10 000

1000

7

6

8

21159

I

PP (A)

- 4

- 2

0

2

4

6

8

10

01

23

45

Reverse

Forward

Measured acc. IEC 61000-4-5

(8/20 µs - wave form)

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