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BSM150GB120DN2 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BSM150GB120DN2 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 9 page Semiconductor Group 3 Mar-28-1996 BSM 150 GB 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Ω td(on) - 200 400 ns Rise time VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Ω tr - 100 200 Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Ω td(off) - 600 800 Fall time VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Ω tf - 70 100 Free-Wheel Diode Diode forward voltage IF = 150 A, VGE = 0 V, Tj = 25 °C IF = 150 A, VGE = 0 V, Tj = 125 °C VF - - 1.8 2.3 - 2.8 V Reverse recovery time IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs, Tj = 125 °C trr - 0.4 - µs Reverse recovery charge IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs Tj = 25 °C Tj = 125 °C Qrr - - 18 5 - - µC |
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