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BZG04-47 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BZG04-47 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BZG04-Series www.vishay.com Vishay Semiconductors Rev. 2.4, 29-Nov-11 1 Document Number: 85594 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Zener Diodes with Surge Current Specification FEATURES • High reliability • Stand-off voltage range 8.2 V to 220 V • Excellent clamping cabability • Fast response time (typ. £ 1 ps from 0 to VZmin.) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • Protection from high voltage, high energy transients PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 10 to 270 V Test current IZT 2 to 50 mA VZ specification Pulse current Int. construction Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZG04-series BZG04-series-TR3 6000 per 13" reel 6000/box BZG04-series BZG04-series-TR 1500 per 7" reel PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS DO-214AC 77 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation RthJA < 25 K/W, Tamb = 100 °C Ptot 3000 mW RthJA < 100 K/W, Tamb = 50 °C Ptot 1250 mW Non repetitive peak surge power dissipation tp = 10/1000 μs sq.pulse, Tj = 25 °C prior to surge PZSM 300 W Peak forward surge current 10 ms single half sine wave IFSM 50 A Junction to lead RthJL 25 K/W Junction to ambient air Mounted on epoxy-glass hard tissue,fig. 1b RthJA 150 K/W Mounted on epoxy-glass hard tissue, fig. 1b RthJA 125 K/W Mounted on Al-oxid-ceramic (Al2O3), fig. 1b RthJA 100 K/W Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Forward voltage (max.) IF = 0.5 A VF 1.2 V |
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