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S07G Datasheet(PDF) 2 Page - Vishay Siliconix |
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S07G Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85733 Rev. 2.0, 20-Aug-10 S07B, S07D, S07G, S07J, S07M Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Note: 1) Averaged over any 20 ms period Thermal Characteristics Tamb = 25 °C, unless otherwise specified Note: 1) Mounted on epoxy substrate with 3 mm x 3 mm CU pads (≥ 40 mm thick) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Note: 1) Pulse test: 300 µ pulse width, 1 % duty cycle Parameter Test condition Part Symbol Value Unit Maximum repetitive peak reverse voltage S07B VRRM 100 V S07D VRRM 200 V S07G VRRM 400 V S07J VRRM 600 V S07M VRRM 1000 V Maximum RMS voltage S07B VRMS 70 V S07D VRMS 140 V S07G VRMS 280 V S07J VRMS 420 V S07M VRMS 700 V Maximum DC blocking voltage S07B VDC 100 V S07D VDC 200 V S07G VDC 400 V S07J VDC 600 V S07M VDC 1000 V Maximum average forward rectified current Ttp = 75 °C 1) IF(AV) 1.5 A TA = 65 °C 1) IF(AV) 0.7 A Peak forward surge current 8.3 ms single half sine-wave TL = 25 °C IFSM 25 A Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air 1) RthJA 180 K/W Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C Parameter Test condition Symbol Min. Typ. Max. Unit Maximum instantaneous forward voltage 1 A 1) VF 1.1 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C IR 10 μA TA = 125 °C IR 50 μA Reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr 1.8 μs Typical capacitance at 4 V, MHz Cj 4pF |
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