MMBD7000-V-G

Document Number 85873

Rev. 1.0, 13-May-11

Vishay Semiconductors

www.vishay.com

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This document is subject to change without notice.

Small Signal Switching Diode, Dual

Features

• Silicon Epitaxial Planar Diode

• Fast switching dual diode, especially

suited for automatic insertion

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC

and in accordance to WEEE 2002/96/EC

Mechanical Data

Case: SOT-23

Weight: approx. 8.1 mg

Packaging Codes/Options:

18 / 10 k per 13" reel (8 mm tape), 10 k/box

08 / 3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Absolute Maximum Ratings

Part

Ordering code

Type Marking

Remarks

MMBD7000-V-G

MMBD7000-V-G-18 or MMBD7000-V-G-08

M5G

Tape and Reel

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

100

V

Forward current (continuous)

200

mA

Non-repetitive peak forward

current

t = 1 s

500

mA

Power dissipation

on FR-5 board

225

mW

Derate above 25 °C

1.8

mW/K

Total device dissipation

on Alumina substrate

300

mW

Derate above 25 °C

2.4

mW/K