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NCV8570BSN18T1G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCV8570BSN18T1G
Description  200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8570BSN18T1G Datasheet(HTML) 3 Page - ON Semiconductor

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NCV8570B
http://onsemi.com
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage (Note 2)
IN
−0.3 V to 6 V
V
Chip Enable Voltage
EN
−0.3 V to VIN +0.3 V
Noise Reduction Voltage
BYP
−0.3 V to VIN +0.3 V
V
Output Voltage
OUT
−0.3 V to VIN +0.3 V
V
Output Short−Circuit Duration
Infinity
Maximum Junction Temperature
TJ(max)
125
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V tested per MIL−STD−883, Method 3015
Machine Model Method 200 V
This device meets or exceeds AEC−Q100 standard.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Package Thermal Resistance, DFN6: (Notes 2, 3)
Junction−to−Case (Pin 2)
Junction−to−Ambient
YJL2
RqJA
108
153
°C/W
Package Thermal Resistance, TSOP−5: (Notes 2, 3)
Junction−to−Case (Pin 2)
Junction−to−Ambient
YJL2
RqJA
92
204
°C/W
2. Refer to APPLICATION INFORMATION for Safe Operating Area
3. Single component mounted on 1 oz, FR4 PCB with 645mm2 Cu area.


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