BFU725F datasheet(5/12 Pages) PHILIPS

Part #	BFU725F

Description	NPN wideband silicon germanium RF transistor

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BFU725F_N1

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Product data sheet

Rev. 2 — 3 November 2011

5 of 12

NXP Semiconductors

BFU725F/N1

NPN wideband silicon germanium RF transistor

[1]

Gp(max) is the maximum power gain, if K  1. If K  1 then Gp(max) =MSG.

PL(1dB)

output power at 1 dB gain

compression

IC =25 mA; VCE =2V; ZS =ZL =50 ; Tamb =25 C

f=1.5GHz

-

8.5

-

dBm

f=1.8GHz

-

9

-

dBm

f=2.4GHz

-

8.5

-

dBm

f=5.8GHz

-

8

-

dBm

IP3

third-order intercept point

IC =25 mA; VCE =2V; ZS =ZL =50 ; Tamb =25 C;

f2 =f1 + 1 MHz

f1 = 1.5 GHz

-

17

-

dBm

f1 = 1.8 GHz

-

17

-

dBm

f1 = 2.4 GHz

-

17

-

dBm

f1 = 5.8 GHz

-

19

-

dBm

Table 7.

Characteristics …continued

Tj =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

Tamb =25 C.

(1) IB =110 A

(2) IB = 100 A

(3) IB =90 A

(4) IB =80 A

(5) IB =70 A

(6) IB =60 A

(7) IB =50 A

(8) IB =40 A

(9) IB =30 A

(10) IB =20 A

(11) IB =10 A

Tamb =25 C.

(1) VCE =1V

(2) VCE = 1.5 V

(3) VCE =2V

Fig 2.

Collector current as a function of

collector-emitter voltage; typical values

Fig 3.

DC current gain a function of collector current;

typical values

VCE (V)

0

2.5

0.5

2.0

3.0

1.5

1.0

3.5

001aak271

10

20

30

IC

(mA)

0

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)

001aak272

IC (mA)

030

20

10

300

250

350

400

hFE

200

(1)

(2)

(3)

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