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BFU725F Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFU725F Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 5 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor [1] Gp(max) is the maximum power gain, if K 1. If K 1 then Gp(max) =MSG. PL(1dB) output power at 1 dB gain compression IC =25 mA; VCE =2V; ZS =ZL =50 ; Tamb =25 C f=1.5GHz - 8.5 - dBm f=1.8GHz - 9 - dBm f=2.4GHz - 8.5 - dBm f=5.8GHz - 8 - dBm IP3 third-order intercept point IC =25 mA; VCE =2V; ZS =ZL =50 ; Tamb =25 C; f2 =f1 + 1 MHz f1 = 1.5 GHz - 17 - dBm f1 = 1.8 GHz - 17 - dBm f1 = 2.4 GHz - 17 - dBm f1 = 5.8 GHz - 19 - dBm Table 7. Characteristics …continued Tj =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tamb =25 C. (1) IB =110 A (2) IB = 100 A (3) IB =90 A (4) IB =80 A (5) IB =70 A (6) IB =60 A (7) IB =50 A (8) IB =40 A (9) IB =30 A (10) IB =20 A (11) IB =10 A Tamb =25 C. (1) VCE =1V (2) VCE = 1.5 V (3) VCE =2V Fig 2. Collector current as a function of collector-emitter voltage; typical values Fig 3. DC current gain a function of collector current; typical values VCE (V) 0 2.5 0.5 2.0 3.0 1.5 1.0 3.5 001aak271 10 20 30 IC (mA) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) 001aak272 IC (mA) 030 20 10 300 250 350 400 hFE 200 (1) (2) (3) |
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