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BPX86 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BPX86 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 5 page Semiconductor Group 3 BPX 80 BPX 82 ... 89 Kollektorspitzenstrom, τ < 10 µs Collector surge current I CS 200 mA Verlustleistung, T A = 25 °C Total power dissipation P tot 90 mW Wärmewiderstand Thermal resistance R thJA 750 K/W Kennwerte ( T A = 25 °C, λ = 950 nm) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λ S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S max Spectral range of sensitivity S = 10 % of S max λ 440 ... 1070 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.17 mm2 Abmessung der Chipfläche Dimensions of chip area L × B L × W 0.6 × 0.6 mm × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface H 1.3 ... 1.9 mm Halbwinkel Half angle ϕ± 18 Grad deg. Kapazität Capacitance V CE = 0 V, f = 1 MHz, E = 0 C CE 6pF Dunkelstrom Dark current V CE = 25 V, E = 0 I CEO 25 ( ≤ 200) nA Grenzwerte Maximum Ratings (cont’d) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit |
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