©2011 Fairchild Semiconductor Corporation

1

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FGD4536 Rev. A

March 2011

Absolute Maximum Ratings

Thermal Characteristics

Notes:

(1) Half Sine Wave, D < 0.01, pluse width < 1

* Ic_pluse limited by max Tj

Symbol

Description

Ratings

Units

Collector to Emitter Voltage

360

V

Gate to Emitter Voltage

± 30

V

Pulsed Collector Current

A

Maximum Power Dissipation

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

Storage Temperature Range

-55 to +150

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction to Case

-

1.0

Thermal Resistance, Junction to Ambient

-

62.5

D-PAK

G

E

C

FGD4536

360V, PDP IGBT

Features

• High Current Capability

• High Input Impedance

•Fast Switching

•RoHS Compliant

Application

• PDP System

General Description

Using Novel Trench IGBT Technology, Fairchild’s new series of

trench

IGBTs

offer

the

optimum

performance

for

PDP

applications where low conduction and switching losses are

essential.