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STT6602 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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STT6602 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
3 / 7 page STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω Ω Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω Ω Ω N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 15-Aug-2011 Rev. A Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode Forward On Voltage 1 N-Ch VSD - - 1.2 V IS=0.9A, VGS=0 P-Ch - - -1.2 IS= -0.9A, VGS=0 Reverse Recovery Time N-Ch Trr - 14 - ns IS=3A, VGS=0 ,dI/dt=100A/µs P-Ch - 15 - IS= -2A, VGS=0 ,dI/dt=100A/µs Reverse Recovery Charge N-Ch Qrr - 7 - nC IS=3A, VGS=0 ,dI/dt=100A/µs P-Ch - 7 - IS= -2A, VGS=0 ,dI/dt=100A/µs Notes: 1. Pulse test |
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