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STT6602 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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STT6602 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 7 page STT6602 N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ Ω Ω Ω P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ Ω Ω Ω N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 15-Aug-2011 Rev. A Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 6602 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. FEATURES Low Gate Change Low On-resistance MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit N-Channel P-Channel Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current 2 TA=25°C ID 3.3 -2.3 A TA=70°C 2.6 -1.8 Pulsed Drain Current 1 IDM 10 -10 A Power Dissipation @TA=25°C PD 1.14 W Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA 110 °C / W Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in 2 copper pad of FR4 board, t≦5sec; 180°C / W when mounted on Min. copper pad. Package MPQ Leader Size TSOP-6 3K 7 inch Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0 0.10 B 2.60 3.00 H 0.60 REF. C 1.40 1.80 J 0.12 REF. D 1.10 MAX. K 0° 10° E 1.90 REF. L 0.95 REF. F 0.30 0.50 TSOP-6 B L F H C J D G K A E 1 2 3 4 5 6 |
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