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BGA312 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BGA312
Description  Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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 3 page
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BGA 312
Semiconductor Group
Sep-04-1998
3
S-Parameters at
TA = 25 °C
f
S11
S22
S12
S21
ANG
ANG
MAG
MAG
MAG
ANG
GHz
MAG
ANG
VD = 4.7 V, Zo = 50 Ω
0.01
0.1
0.3
0.5
0.8
1
1.8
2.4
3
0.009
0.012
0.027
0.039
0.049
0.046
0.054
0.147
0.24
17.9
43.5
55.8
52.5
33.7
22.2
-135.4
179.9
152.1
3.94
3.95
3.93
3.89
3.79
3.69
3.13
2.63
2.19
179.2
174.4
163.4
152.2
135.8
124.9
84.1
57.6
35.7
0.131
0.131
0.133
0.136
0.142
0.149
0.181
0.205
0.225
0.2
1.7
4.8
7.8
11.7
13.8
16.6
14.7
11.6
0.208
0.207
0.204
0.201
0.194
0.191
0.183
0.182
0.184
-0.5
-6.2
-19.1
-31.9
-51.3
-64.2
-106.8
-124.9
-134.9
Insertion power gain |
S21|2 = f ( f )
VD = 4.7 V, ID = 42 mA
10
-1
10
0
10
1
GHz
f
0
5
10
15
dB
25
Noise figure
NF = f ( f )
VD = 4.7 V, ID = 42 mA
10
-1
10
0
10
1
GHz
f
0
2
4
6
dB
10
Semiconductor Group
3
1998-11-01




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Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
BGA310Silicon Bipolar MMIC-Amplifier Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz 1 2 3 4 Siemens Semiconductor Group
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