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BGA312 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BGA312
Description  Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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 2 page
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BGA 312
Semiconductor Group
Sep-04-1998
2
Electrical Characteristics at
TA = 25 °C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
AC characteristics (
VD = 4.7 V, Zo = 50 Ω)
dB
12
11
10
-
-
-
-
-
-
|
S21|2
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Insertion point gain flatness
f = 0.1 GHz to 0.6 GHz
-
∆ |S
21|
2
-
+-0.6
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 2 GHz
NF
5.5
6
7
-
-
-
-
-
-
1dB compression point
f = 1 GHz
P-1dB
-
dBm
-
9
Return loss input
f = 0.1 GHz to 2 GHz
RLin
-
20
-
dB
Return loss output
f = 0.1 GHz to 3 GHz
RLout
-
14
-
Typical biasing configuration
EHA07313
D
V
RFC (optional)
IN
C
Block
Block
C
OUT
Ι
D
Bias
R
min. CC
V =7 V
1
3
2
4
RBias = VCC - VD / ID
VD = 4.7V
Semiconductor Group
2
1998-11-01




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