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BGA312 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BGA312
Description  Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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 1 page
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BGA 312
Semiconductor Group
Sep-04-1998
1
Silicon Bipolar MMIC-Amplifier
Preliminary data
• Cascadable 50 Ω-gain block
• 11 dB typical gain at 1.0 GHz
• 9 dBm typical P
-1dB at 1.0 GHz
• 3 dB-bandwidth: DC to 2.0 GHz
VPS05178
2
1
3
4
EHA07312
3
1
2, 4
RF IN
RF OUT/Bias
GND
Circuit Diagram
Type
Marking Ordering Code
Pin Configuration
Package
BGA 312 BMs
Q62702-G0042
1 RFout/bias 2 GND 3 RFinput
4 GND SOT-143
Maximum Ratings
Parameter
Value
Symbol
Unit
Device current
ID
mA
60
Total power dissipation,
TS ≤ 99 °C
250
Ptot
mW
RF input power
dBm
10
PRFin
Tj
Junction temperature
150
°C
Ambient temperature
TA
-65 ...+150
Storage temperature
Tstg
-65 ...+150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 205
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb
Semiconductor Group
1
1998-11-01




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