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RU190N10Q Datasheet(PDF) 2 Page - Ruichips Semiconductor Co., Ltd |
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RU190N10Q Datasheet(HTML) 2 Page - Ruichips Semiconductor Co., Ltd |
2 / 11 page Copyright © Ruichips Semiconductor Co., Ltd Rev. C – JAN., 2010 2 www.ruichips.com RU190N10 Electrical Characteristics (T A=25°C Unless Otherwise Noted) RU190N10 Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250 µA 100 V VDS= 100V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current TJ=85°C 30 µA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250 µA 2 3 4 V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA RDS(ON) ③ Drain-Source On-state Resistance VGS= 10V, IDS=60A 6.5 8.0 m Ω Notes: ①Pulse width limited by safe operating area. ②Current limited by package( Limitation Current is 75A ) ③Pulse test ; Pulse width ≤300 µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Diode Characteristics VSD ③ Diode Forward Voltage ISD=60 A, VGS=0V 0.8 1.3 V trr Reverse Recovery Time 68 ns qrr Reverse Recovery Charge ISD=60A, dlSD/dt=100A/ µs 130 nC Dynamic Characteristics ④ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.0 Ω Ciss Input Capacitance 6700 Coss Output Capacitance 1000 Crss Reverse Transfer Capacitance VGS=0V, VDS= 30V, Frequency=1.0MHz 510 pF td(ON) Turn-on Delay Time 23 41 tr Turn-on Rise Time 42 70 td(OFF) Turn-off Delay Time 120 210 tf Turn-off Fall Time VDD=35V, RL=35 Ω, IDS= 1A, VGEN= 10V, RG=6 Ω 75 140 ns Gate Charge Characteristics ④ Qg Total Gate Charge 155 220 Qgs Gate-Source Charge 45 Qgd Gate-Drain Charge VDS=30V, VGS= 10V, IDS=60A 48 nC |
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