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BFQ81 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. BFQ81
Description  NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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Semiconductor Group
1
Dec-12-1996
BFQ 81
NPN Silicon RF Transistor
• For low-noise amplifiers up to 2GHz
and broadband analog and digital
applications in telecommunications systems at
collector currents from 0.5 mA to 20 mA.
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFQ 81
RAs
Q62702-F1049
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
16
V
Collector-emitter voltage
VCES
25
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2
Collector current
IC
30
mA
Base current
IB
4
Total power dissipation
TS ≤ 59 °C
Ptot
280
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 325
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.




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