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BFQ74 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BFQ74
Description  NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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BFQ 74
BFQ 74
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
AC Characteristics
Unit
Values
Parameter
Symbol
min.
typ.
max.
Power gain
IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50
IC = 15 mA, VCE = 10 V, f = 4 GHz, Z0 = 50
Gma1)
Gms2)
14
9.8
GHz
Transition frequency
IC = 5 mA, VCE = 10 V, f = 200 MHz
IC = 15 mA, VCE = 10 V, f = 200 MHz
fT
4.4
6
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cce
0.4
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
0.7
dB
Noise figure
IC = 3 mA, VCE = 10 V, f = 10 MHz, ZS = 75
IC = 5 mA, VCE = 10 V, f = 800 MHz, ZS = 50
IC = 10 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt
F
0.9
1.4
2.5
2.9
pF
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
0.3
0.4
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
1.35
Transducer gain
IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50
I S21e I 2
9.8
mV
Linear output voltage
two-tone intermodulation test
IC = 25 mA, VCE = 10 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
Vo1 = Vo2
160
dBm
Third order intercept point
IC = 25 mA, VCE = 10 V, f = 800 MHz
IP3
–27
1)
S21e
S12e
2)
S21e
S12e
(k –
k 2–1)




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