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GBU10B Datasheet(PDF) 1 Page - Rugao Dachang Electronics Co., Ltd

Part # GBU10B
Description  Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000V Forward Current 10 A
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Manufacturer  DACHANG [Rugao Dachang Electronics Co., Ltd]
Direct Link  http://www.dachang.com.cn
Logo DACHANG - Rugao Dachang Electronics Co., Ltd

GBU10B Datasheet(HTML) 1 Page - Rugao Dachang Electronics Co., Ltd

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8.6
150
10
1.1
40
塑封硅整流桥堆
反向电压
50---1000V
正向电流
10 A
V
μA
pF
IR
Cj
最大正向电压
IF = 5.0A
最大反向电流
TA= 25℃
电特性 TA = 25℃ 除非另有规定。
Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
单位
Unit
符号
Symbols
Maximum forward voltage
Maximum reverse current
Type junction capacitance
VF
-55--- +150
V
V
V
A
A
℃
/W
℃
VRRM
VRMS
VDC
IF(AV)
IFSM
极限值和温度特性
TA = 25℃ 除非另有规定。
Maximum Ratings & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
工作结温和存储温度
符号
Symbols
单位
Unit
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 1000V
Forward Current 10 A
Operating junction and storage temperature range
Tj, TSTG
大昌电子
DACHANG ELECTRONICS
RθJA
TC =100℃
典型结电容
VR = 4.0V, f = 1MHz
特征
Features
·反向漏电流低
Low reverse leakage
·正向浪涌承受能力较强
High forward surge capability
机械数据 Mechanical Data
·封装: 塑料封装 Case: Molded Plastic
·极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body
·安装位置: 任意 Mounting Position: Any
·浪涌承受能力：150A
S
urge overload rating: 150 Amperes peak
·引线和管体皆符合RoHS标准 。
Lead and body according with RoHS standard
GBU
10A
50
50
35
10
500
TA = 125℃
GBU10A ...... GBU10M
SIYU R
GBU
10B
GBU
10D
GBU
10G
GBU
10J
GBU
10K
GBU
10M
100
100
70
200
200
140
400
400
280
600
600
420
800
800
560
1000
1000
700
GBU
10A
GBU
10B
GBU
10D
GBU
10G
GBU
10J
GBU
10K
GBU
10M
Unit：inch（mm）
GBU
·安装扭距: 推荐值 0.3牛*米 Mounting torque：Recommend 0.3 N*m


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