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Q62702-F1611 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-F1611 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 7 page Semiconductor Group 1 Dec-11-1996 BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 FAs Q62702-F1611 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 16 V Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 30 mA Base current IB 4 Total power dissipation TS ≤ 73 °C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 275 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
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