Q62702-F1611 datasheet(1/7 Pages) SIEMENS

Part #	Q62702-F1611

Description	NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

Dec-11-1996

BFP 81

NPN Silicon RF Transistor

• For low-noise amplifiers up to 2GHz

at collector currents from 0.5 mA to 20 mA.

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 81

FAs

Q62702-F1611

1 = C

2 = E

3 = B

4 = E

SOT-143

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

16

V

Collector-emitter voltage

VCES

25

Collector-base voltage

VCBO

25

Emitter-base voltage

VEBO

2

Collector current

IC

30

mA

Base current

IB

4

Total power dissipation

TS ≤ 73 °C

Ptot

280

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

- 65 ... + 150

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 275

K/W

1)

TS is measured on the collector lead at the soldering point to the pcb.

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Q62702-F1611 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Q62702-F1611 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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