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BFP450 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFP450 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page BFP 450 Semiconductor Group Sep-09-1998 1 SIEGET®25 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - Line VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 450 ANs Q62702-F1590 1 = B 2 = E 3 = C 4 = E SOT-343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO V 4.5 VCBO 15 Collector-base voltage VEBO Emitter-base voltage 1.5 Collector current 100 mA IC IB 10 Base current mW 450 Total power dissipation, TS ≤ 96 °C Ptot Junction temperature Tj 150 °C TA -65 ...+150 Ambient temperature Storage temperature Tstg -65 ...+150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 130 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group 1 1998-11-01 |
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