BFP 450

Semiconductor Group

Sep-09-1998

1

NPN Silicon RF Transistor

• For medium power amplifiers

• Compression point P

maximum available gain

Noise figure

F = 1.25 dB at 1.8 GHz

• Transition frequency f

• Gold metalization for high reliability

• SIEGET ® 25 - Line

Siemens Grounded Emitter Transistor

25 GHz

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 450

ANs

Q62702-F1590

1 = B

2 = E

3 = C

4 = E

SOT-343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V

4.5

15

Collector-base voltage

Emitter-base voltage

1.5

Collector current

100

mA

10

Base current

mW

450

Total power dissipation,

Junction temperature

150

°C

-65 ...+150

Ambient temperature

Storage temperature

-65 ...+150

Thermal Resistance

Junction - soldering point

1)

≤ 130

K/W

1) TS is measured on the collector lead at the soldering point to the pcb

Semiconductor Group

1

1998-11-01