BC868 datasheet(1/2 Pages) HTSEMI

Part #	BC868

Description	TRANSISTOR (NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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FEATURES

High current

Low voltage

MAXIMUM RATINGS

(TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

32

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1

A

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

32

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=25V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

hFE(1)

VCE=1V,IC=500mA

85

375

hFE(2)

VCE=1V,IC=1A

60

DC current gain

hFE(3)

VCE=10V,IC=5mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=1A,IB=100mA

0.5

V

VBE1

VCE=10V,IC=5mA

0.62

V

Base-emitter voltage

VBE2

VCE=1V,IC=1A

1

V

Transition frequency

fT

VCE=5V,IC=10mA,f=100MHz

40

MHz

CLASSIFICATION OF

hFE(1)

Rank

BC868-10

BC868-16

BC868-25

Range

85-160

100-250

160-375

Marking

CBC

CCC

CDC

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

BC868

TRANSISTOR (NPN)

１　

Ｄａｔｅ：２０１１／０５

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semiconductor

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