BC847B datasheet(2/4 Pages) HTSEMI

Part #	BC847B

Description	TRANSISTOR (NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BC846

BC847

BC848

VCBO

IC= 10µA, IE=0

80

50

30

V

Collector-emitter breakdown voltage

BC846

BC847

BC848

VCEO

IC= 10mA, IB=0

65

45

30

V

Emitter-base breakdown voltage

VEBO

IE= 10µA, IC=0

6

V

Collector cut-off current

BC846

BC847

BC848

ICBO

VCB=70 V , IE=0

VCB=50 V , IE=0

VCB=30 V , IE=0

0.1

μA

Collector cut-off current

BC846

BC847

BC848

ICEO

VCE=60 V , IB=0

VCE=45 V , IB=0

VCE=30 V , IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5 V ,

IC=0

0.1

μA

DC current gain

BC846A,847A,848A

BC846B,847B,848B

BC847C,BC848C

hFE

VCE= 5V, IC= 2mA

110

200

420

220

450

800

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB= 5mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB= 5mA

1.1

V

Transition frequency

fT

VCE= 5 V, IC= 10mA

f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=10V,f=1MHz

4.5

pF

２　

Ｄａｔｅ：２０１１／０５

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BC846A,B / BC847A, B, C / BC848A, B, C

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BC847B Datasheet(PDF) 2 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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