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BAS40 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
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BAS40 Datasheet(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd. |
1 / 2 page SCHOTTKY DIODE FEATURES Low Forward Voltage Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING:45 BAS40-04 MARKING:44 Maximum Ratings @TA=25 ℃ Parameter Symbol Limits Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking Voltage VRRM VRWM VR 40 V Forward continuous Current IFM 200 mA Power Dissipation PD 200 mW Thermal Resistance. Junction to Ambient Air RθJA 625 ℃/W Junction temperature TJ 125 ℃ Storage temperature range TSTG -65-125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 10μA 40 V Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV Diode capacitance CD VR=0,f=1MHz 5 pF Reverse Recovery time t r r Irr=1mA, IR=IF=10mA RL=100Ω 5 nS SOT-23 BAS40/-04/-05/-06 1 Date:2011/05 www.htsemi.com semiconductor JinYu |
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