2SD965A datasheet(1/2 Pages) HTSEMI

Part #	2SD965A

Description	TRANSISTOR (NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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TRANSISTOR (NPN)

FEATURES

Audio amplifier

Flash unit of camera

Switching circuit

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current -Continuous

5

A

PC

Collector Power Dissipation

750

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=0.1mA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA. IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10μA, IC=0

7

V

Collector cut-off current

ICBO

VCB= 10V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=7V, IC=0

0.1

μA

hFE(1)

VCE= 2 V, IC=1mA

200

hFE’(2)

VCE= 2V, IC = 500mA

230

800

DC current gain

hFE(3)

VCE= 2V, IC =2A

150

Collector-emitter saturation voltage

VCE(sat)

IC=3A, IB=0.1A

1

V

Transition frequency

fT

VCE=6V, IC=50mA

150

MHz

Out capacitance

Cob

VCB=20 V , IE=0, f=1MHZ

50

pF

CLASSIFICATION OF

hFE(2)

Rank

Q

R

S

Range

230-380

340-600

560-800

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

2SD965A

１　

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2SD965A Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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