2SC3356 datasheet(1/1 Pages) HTSEMI

Part #	2SC3356

Description	TRANSISTOR (NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

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2. 80¡ À0. 05

1. 60¡ À0. 05

TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

0.2

W (Tamb=25

℃)

Collector current

ICM:

0.1

A

Collector-base voltage

V(BR)CBO:

20

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=10

µA, IE=0

20

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 1mA, IB=0

12

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10µA, IC=0

3

V

Collector cut-off current

ICBO

VCB= 10 V, IE=0

1

µA

Emitter cut-off current

IEBO

VEB= 1V , IC=0

1

µA

DC current gain

hFE

VCE= 10V, IC= 20mA

50

300

Transition frequency

fT

VCE=10V, IC= 20mA

6

GHz

Noise figure

NF

VCE=10V, IC= 7mA, f = 1GHz

2

dB

CLASSIFICATION OF hFE

Marking

R23

R24

R25

Rank

Q

R

S

Range

50-100

80-160

125-250

SOT-23-3L

1. BASE

2. EMITTER

3. COLLECTOR

2SC3356

１　

Ｄａｔｅ：２０１１／０５

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2SC3356 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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