BFN26 datasheet(1/4 Pages) SIEMENS

Part #	BFN26

Description	NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

NPN Silicon High-Voltage Transistors

BFN 24

BFN 26

Maximum Ratings

Type

Ordering Code

(tape and reel)

Marking

Package1)

Pin Configuration

BFN 24

BFN 26

Q62702-F1065

Q62702-F976

FHs

FJs

SOT-23

B

E

C

1

2

3

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm

× 40 mm × 1.5 mm/6 cm2 Cu.

Parameter

Symbol

Values

Unit

Emitter-base voltage

VEB0

Collector-base voltage

VCB0

Junction temperature

Tj

˚C

Total power dissipation, TS = 74 ˚C

Ptot

mW

Storage temperature range

Tstg

Collector-emitter voltage

VCE0

V

Thermal Resistance

Junction - ambient2)

Rth JA

≤ 280

K/W

5

360

150

– 65 … + 150

250

300

BFN 24

BFN 26

Collector current

IC

mA

200

Peak collector current

ICM

500

Junction - soldering point

Rth JS

≤ 210

250

300

Base current

IB

100

Peak base current

IBM

200

q

Suitable for video output stages in TV sets

and switching power supplies

q

High breakdown voltage

q

Low collector-emitter saturation voltage

q

Complementary types: BFN 25, BFN 27 (PNP)

07.94

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BFN26 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

BFN26 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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