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BFN26 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFN26 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BFN 24 BFN 26 Q62702-F1065 Q62702-F976 FHs FJs SOT-23 B E C 1 2 3 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol Values Unit Emitter-base voltage VEB0 Collector-base voltage VCB0 Junction temperature Tj ˚C Total power dissipation, TS = 74 ˚C Ptot mW Storage temperature range Tstg Collector-emitter voltage VCE0 V Thermal Resistance Junction - ambient2) Rth JA ≤ 280 K/W 5 360 150 – 65 … + 150 250 300 BFN 24 BFN 26 Collector current IC mA 200 Peak collector current ICM 500 Junction - soldering point Rth JS ≤ 210 250 300 Base current IB 100 Peak base current IBM 200 q Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BFN 25, BFN 27 (PNP) 07.94 |
Similar Part No. - BFN26 |
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Similar Description - BFN26 |
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