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 SIEMENS
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Semiconductor Group 2 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Collector-emitter breakdown voltage IC = 1 mA BFN 24 BFN 26 V(BR)CE0 250 300 – – – – nA nA µA µA Collector-base cutoff current VCB = 200 V BFN 24 VCB = 250 V BFN 26 VCB = 200 V, TA = 150 ˚C BFN 24 VCB = 250 V, TA = 150 ˚C BFN 26 ICB0 – – – – – – – – 100 100 20 20 Unit Values Parameter Symbol min. typ. max. DC characteristics Emitter-base breakdown voltage IE = 100 µA V(BR)EB0 5–– V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFN 24 BFN 26 VCEsat – – – – 0.4 0.5 – DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) BFN 24 BFN 26 hFE 25 40 40 30 – – – – – – – – MHz Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT –70 – AC characteristics pF Output capacitance VCB = 30 V, f = 1 MHz Cobo – 1.5 – Collector-base breakdown voltage IC = 100 µA BFN 24 BFN 26 V(BR)CB0 250 300 – – – – nA Emitter-base cutoff current VEB = 3 V IEB0 – – 100 Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VBEsat – – 0.9 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. BFN 24 BFN 26 |
